2SB834 transistor (pnp) features power dissipation p cm : 1.5 w (tamb=25 ) collector current i cm : -3 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -50 ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -7 v collector cut-off current i cbo v cb = -60 v, i e =0 -100 a emitter cut-off current i ebo v eb = -7 v, i c =0 -100 a h fe(1) v ce = -5 v, i c = -500 ma 60 200 dc current gain h fe(2) v ce = -5 v, i c = -3 a 20 collector-emitter saturation voltage v ce(sat) i c = -3 a, i b = -0.3 a -1 v base-emitter voltage v be v ce = -5 v, i c = -500 ma -1 v transition frequency f t v ce = -5 v,i c = -500 ma 9 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 150 pf turn-on time t on 0.4 s storage time t stg 1.7 s turn-off time t off v cc =- 30 v, i c =- 2 a, i b! =i b2 =-0.2a 0.5 s classification of h fe(1) rank o y range 60-120 100-200 1 2 3 to-220 1. base 2. collector 3. emitter 2SB834 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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